Infineon opens high-tech chip factory for power electronics on 300-millimeter thin wafers This will help players familiarize themselves with the movements of their toughest competitors in the GaN HEMT market. The major and emerging players of the GaN HEMT Market are closely studied considering their market share, production, sales, revenue growth, gross margin, product portfolio, and other important factors. With the help of the competitive analysis provided in the report, players can easily study the key strategies employed by leading players in the GaN HEMT market. Some of the key players profiled in the study are Infineon Technologies AG, Qorvo, TI, Hoshiba, Fujitsu, Teledyne Technologies Incorporated, Mitsubishi Electric Corp, STMicroelectronics, Northrop Grumman, and other Prominent players.Ĭompetition is an important issue in any market research analysis. Download Full PDF Sample Copy of GaN HEMT Report to our most recent analysis ( Market Intelligence Data) market size is set to grow at robust CAGR of +29.3% during the 2023-2029 periods.
0 kommentar(er)
